DocumentCode :
472715
Title :
Characterization of Trench Transistors for 3-D Memories
Author :
Banerjee, S.K. ; Shichujo, H. ; Nishimura, A. ; Shah, A.H. ; Pollack, G.P. ; Richardson, W.F. ; Bordelon, M. ; Malhi, S.D.S. ; Elahy, M. ; Womack, R.H. ; Wang, C.P. ; Gallia, J. ; Davis, H.E. ; Chatterjee, P.K.
Author_Institution :
Semiconiductor Process and Design Center Texas Instruments Inc. Dallas, Texas 75265
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
79
Lastpage :
80
Keywords :
Capacitors; Doping; Electrical resistance measurement; Epitaxial layers; Etching; MOSFETs; Plugs; Process design; Random access memory; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472715
