DocumentCode
472719
Title
Trench Self-Aligned EPROM Technology
Author
Sekiya, K. ; Ohya, S. ; Nio, Y. ; Ozaki, J. ; Okamura, K. ; Kikuchi, M.
Author_Institution
NEC Corporation Sagamihara, Kanagawa 229, Japan
fYear
1986
fDate
28-30 May 1986
Firstpage
87
Lastpage
88
Keywords
Contact resistance; EPROM; Insulation; Isolation technology; National electric code; Paper technology; Read only memory; Substrates; Testing; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480383
Link To Document