DocumentCode :
472719
Title :
Trench Self-Aligned EPROM Technology
Author :
Sekiya, K. ; Ohya, S. ; Nio, Y. ; Ozaki, J. ; Okamura, K. ; Kikuchi, M.
Author_Institution :
NEC Corporation Sagamihara, Kanagawa 229, Japan
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
87
Lastpage :
88
Keywords :
Contact resistance; EPROM; Insulation; Isolation technology; National electric code; Paper technology; Read only memory; Substrates; Testing; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480383
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472719
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