Title :
Variable Proximity Corrections for Submicron Optical Lithographic Masks
Author :
Nissan-Cohen, Y. ; Frank, P. ; Balch, E.W. ; Thompson, B. ; Polasko, K. ; Brown, D.M.
Author_Institution :
General Electric Corporate Research and Development Center P.O. Box 8 Schenectady, NY 12301
Abstract :
The method for applying variable proximity corrections is easily adopted to a self-contained design and fabrication system. Results show that this methodology can extend the practical limit of existing DSW exposure systems into the submicron region.
Keywords :
Circuit synthesis; Etching; Lithography; Optical device fabrication; Proximity effect; Research and development; Resists; Size control; System testing; Transfer functions;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
