Title :
A Trench Isolation Technology for High-Speed and Low-Power Dissipation Bipolar LSI´s
Author :
Sakai, H. ; Kikuchi, K. ; Kameyama, S. ; Kajiyama, M. ; Komeda, T.
Author_Institution :
Semiconductor Research Center Matsushita Electric Industrial Co., Ltd. Moriguchi, Osaka 570, Japan
Keywords :
Capacitance; Delay effects; Diodes; Etching; Isolation technology; Leakage current; Power dissipation; Silicon; Substrates; Wiring;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
