472736

Reduced Process Sensitivity of Polysilicon Emitter Contacts for VLSI Bipolar Transistors

Crabbe, E. ; Hoyt, J.L. ; Moslehi, M.M. ; Pease, R.F.W. ; Gibbons, J.F.

Stanford Electronics Laboratories Stanford University, Stanford, CA 94305

1987

22-23 May 1987

33

34

Backscatter; Bipolar transistors; Doping; Laboratories; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface morphology; Temperature; Very large scale integration;

English

ieee

VLSI Technology, 1987. Digest of Technical Papers. Symposium on

Karuizawa, Japan

conf

4480408