DocumentCode
472737
Title
Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy
Author
Sugii, T. ; Yamazaki, T. ; Fukano, T. ; Ito, T.
Author_Institution
Fujitsu Laboratories Ltd. Atsugi 10-1, Morinosato-wakamiya, Atsugi 243-01, Japan
fYear
1987
fDate
22-23 May 1987
Firstpage
35
Lastpage
36
Keywords
Bipolar transistors; Boron; Doping; Electrodes; Epitaxial growth; Epitaxial layers; Fabrication; Substrates; Temperature dependence; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480409
Link To Document