• DocumentCode
    472740
  • Title

    Advanced One Micron BICMOS Technology for High Speed 256K SRAMS

  • Author

    Bastani, B. ; Lage, C. ; Wong, L. ; Small, J. ; Lahri, R. ; Bouknight, L. ; Bowman, T. ; Manoliu, J. ; Tuntasood, P.

  • Author_Institution
    BiCMOS Integration, Unit Process Development, Device Physics, and Design Groups Fairchild Semiconductor Puyallup, WA 98373
  • fYear
    1987
  • fDate
    22-23 May 1987
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    One micron BiCMOS technology for high speed 256K SRAM is developed. Advanced lithography and processing techniques support high density CMOS design with ECL performance. This technology is also extended to logic applications.
  • Keywords
    Beak; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Contact resistance; Implants; MOSFET circuits; Random access memory; Ring oscillators; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. Digest of Technical Papers. Symposium on
  • Conference_Location
    Karuizawa, Japan
  • Type

    conf

  • Filename
    4480412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472740