DocumentCode :
472742
Title :
Hot-Carrier-Induced MOSFET Degradation: AC Versus DC Stressing
Author :
Choi, J.Y. ; Ko, P.K. ; Hu, C.
Author_Institution :
Electronics Research Laboratory Department of Electrical Engineering and Computer Science University of California, Berkeley, CA 94720
fYear :
1987
fDate :
22-23 May 1987
Firstpage :
45
Lastpage :
46
Keywords :
Charge carrier processes; Computer science; Degradation; Electron traps; Hot carriers; Inverters; MOSFET circuits; Stress; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
Type :
conf
Filename :
4480414
Link To Document :
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