Title :
Hot-Carrier Degradation Mechanism under AC Stress in MOSFET´s
Author :
Igura, Yasuo ; Takeda, Eiji
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
Keywords :
Degradation; Electrical resistance measurement; Electron traps; Hot carriers; Passivation; Pulse measurements; Pulse modulation; Stress; Timing; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
