Title :
Hot-Carrier Effects under Pulsed Stress in CMOS Devices
Author :
Aoki, Masaaki ; Yano, Kazuo ; Masuhara, Toshiaki ; Komiyaji, Kunihiro
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
Keywords :
Degradation; Doping; Electron traps; Filling; Hot carrier effects; Hot carriers; MOSFETs; Predictive models; Pulse generation; Stress;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
