• DocumentCode
    472747
  • Title

    Relationship between Gate Bias and Hot-Carrier Induced Instabilities in P-Channel MOSFETs

  • Author

    Brassington, M.P. ; Razouk, R.R.

  • Author_Institution
    Schlumberger Palo Alto Research - Fairchild 4001 Miranda Ave., Palo Alto. CA94304. USA.
  • fYear
    1987
  • fDate
    22-23 May 1987
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    Maxima in the magnitude of hot-carrier induced instabilities in the saturation characteristics of short p-channel MOSFETs occur for bias conditions that cause the peak gate current to flow. However, parameters measured in the linear regime may also show an additional maxima for stress conditions that lead to maximum substrate current. Device reliability studies should take this distinction between linear and saturation degradation into consideration.
  • Keywords
    Charge carrier processes; Current measurement; Dielectric substrates; Electron traps; Hot carrier injection; Hot carriers; MOSFETs; Stability; Stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. Digest of Technical Papers. Symposium on
  • Conference_Location
    Karuizawa, Japan
  • Type

    conf

  • Filename
    4480419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472747