Sub Micron P-MOSFETs under Static and SWAP Stress

Author

ühlhoff, H.M. ; Murkin, P. ; Orlowski, M. ; Weber, W. ; Küsters, K.H. ; Muller, Wayne ; Rogers, C.M. ; Wendt, H.

Author_Institution

Corporate Research and Technology, Techn. Center for Microelectronics Siemens AG Otto-Hahn-Ring 6, 8000 Munich 83, West Germany

fYear

1987

fDate

22-23 May 1987

Firstpage

Lastpage

Keywords

Annealing; Degradation; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Optical saturation; Random access memory; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1987. Digest of Technical Papers. Symposium on

Conference_Location

Karuizawa, Japan

Type

Filename

4480420

Link To Document