DocumentCode
472750
Title
Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide
Author
Davari, B. ; Ting, C.-Y. ; Ahn, K.Y. ; Basavaiah, S. ; Hu, C.-K. ; Taur, Y. ; Wordeman, M.R. ; Aboelfotoh, O. ; Krusin-Elbaum, L. ; Joshi, R.V. ; Polcari, M.R.
Author_Institution
IBM Thomas J. Watson Research Center Yorktown Heights, NY 10598
fYear
1987
fDate
22-23 May 1987
Firstpage
61
Lastpage
62
Abstract
Submicron tungsten gate MOSFET with 10 nm gate oxide has been demonstrated for the first time. The results ranging from W stability against SiO2to excellent thin oxide MOS properties and high FET transconductance, demonstrate the feasibility and advantages of the tungsten gate for submicron technologies. In applications such as high density DRAM, tungsten can be a primary candidate for gate material due to its low resistivity and midgap work function.
Keywords
Annealing; Conductivity; Electron mobility; Etching; FETs; Implants; MOS devices; MOSFET circuits; Transconductance; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480422
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