DocumentCode
472751
Title
Improvement of Dielectric Strength of Tisix-Polycide-Gate System by Using Rapidly Nitrided Oxides
Author
Hori, T. ; Yoshii, N. ; Iwasaki, H. ; Fukumoto, M. ; Ohzone, T.
Author_Institution
Semiconductor Research Center, Matsushita Elec. Ind. Co., Ltd. Yagumonakamachi, Moriguchi, Osaka 570, Japan
fYear
1987
fDate
22-23 May 1987
Firstpage
63
Lastpage
64
Keywords
CMOS technology; Design for quality; Dielectric breakdown; Dielectric thin films; Electric breakdown; Furnaces; Histograms; MOS capacitors; Rapid thermal annealing; Silicides;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480423
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