Title :
Improvement of Dielectric Strength of Tisix-Polycide-Gate System by Using Rapidly Nitrided Oxides
Author :
Hori, T. ; Yoshii, N. ; Iwasaki, H. ; Fukumoto, M. ; Ohzone, T.
Author_Institution :
Semiconductor Research Center, Matsushita Elec. Ind. Co., Ltd. Yagumonakamachi, Moriguchi, Osaka 570, Japan
Keywords :
CMOS technology; Design for quality; Dielectric breakdown; Dielectric thin films; Electric breakdown; Furnaces; Histograms; MOS capacitors; Rapid thermal annealing; Silicides;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
