Title :
The Use of Cosi2 as Compared to Tisi2 for a Self-Aligned Silicide Technology
Author :
Van den Hove, L. ; Maex, K. ; De Keersmaecker, R. ; Declerck, G. ; Wolters, R.
Author_Institution :
ESAT, K. U. Leuven, Kard. Mercierlaan 94, B-3030 Leuven, Belgium
Keywords :
Compressive stress; Contact resistance; Diodes; Electric resistance; Sheet materials; Silicidation; Silicides; Silicon; Temperature; Thermal stresses;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
