DocumentCode
472753
Title
The Use of Cosi2 as Compared to Tisi2 for a Self-Aligned Silicide Technology
Author
Van den Hove, L. ; Maex, K. ; De Keersmaecker, R. ; Declerck, G. ; Wolters, R.
Author_Institution
ESAT, K. U. Leuven, Kard. Mercierlaan 94, B-3030 Leuven, Belgium
fYear
1987
fDate
22-23 May 1987
Firstpage
67
Lastpage
68
Keywords
Compressive stress; Contact resistance; Diodes; Electric resistance; Sheet materials; Silicidation; Silicides; Silicon; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480425
Link To Document