Title :
Low-Resistive and Selective Silicon Growth as a Self-Aligned Contact Hole Filler and Its Application to 1m Bit Static RAM
Author :
Shibata, H. ; Saitoh, M. ; Matsuno, T. ; Sasaki, H. ; Hashimoto, K. ; Matsunaga, Jun-Ichi ; Samata, S. ; Matsushita, Y.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Keywords :
Aluminum; Doping; Filling; Impurities; Isolation technology; Leakage current; Random access memory; Read-write memory; Silicon; Very large scale integration;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
