• DocumentCode
    472760
  • Title

    Universal Mobility-Field Curves for Electrons and Holes in MOS Inversion Layers

  • Author

    Watt, J.T. ; Plummer, J.D.

  • Author_Institution
    Center for Integrated Systems, Stanford University Stanford, California 94305
  • fYear
    1987
  • fDate
    22-23 May 1987
  • Firstpage
    81
  • Lastpage
    82
  • Keywords
    CMOS technology; Charge carrier processes; Degradation; Doping; Electron mobility; Impurities; MOSFET circuits; Rapid thermal annealing; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. Digest of Technical Papers. Symposium on
  • Conference_Location
    Karuizawa, Japan
  • Type

    conf

  • Filename
    4480432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472760