Title :
Universal Mobility-Field Curves for Electrons and Holes in MOS Inversion Layers
Author :
Watt, J.T. ; Plummer, J.D.
Author_Institution :
Center for Integrated Systems, Stanford University Stanford, California 94305
Keywords :
CMOS technology; Charge carrier processes; Degradation; Doping; Electron mobility; Impurities; MOSFET circuits; Rapid thermal annealing; Semiconductor process modeling; Silicon;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
