Title :
Formation of Si-on-Insulator Structure by Lateral Solid Phase Epitaxial Growth with Local P-Doping
Author :
Moniwa, K. ; Miyao, K. ; Warabisako, T. ; Kusukawa, K. ; Murakami, E. ; Shukuri, S.
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji. Tokyo 185, Japan
Keywords :
Amorphous materials; Annealing; Crystallization; Doping; Epitaxial growth; Raman scattering; Semiconductor films; Spectroscopy; Stress; Substrates;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
