Title :
Trench Capacitor Using R.T.O. for Mega Bit DRAM´s
Author :
Yoneda, K. ; Taniguchi, T. ; Uchida, H. ; Okada, H. ; Oishi, H. ; Miyai, Y. ; Inoue, M.
Author_Institution :
Kyoto Reserch Laboratory, Matsushita Electronics Corporation 19, Nishikujo-Kasugacho, Minami-ku, Kyoto 601 Japan
Keywords :
Capacitors; Compressive stress; Dielectric breakdown; Electric breakdown; Furnaces; Interface states; Oxidation; Random access memory; Temperature dependence; Thermal stresses;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan