DocumentCode
472770
Title
Shallow Trench Isolated Buried N+ FAMOS Transistors for VLSI EPROMs
Author
Esquivel, A.L. ; Mitchell, A.T. ; Paterson, J.L. ; Tigelaar, H.L. ; Riemenschneider, B.R. ; Coffman, T.M. ; Gill, M. ; Lahiry, R. ; McElroy, D. ; Shah, P.
Author_Institution
Semiconductor Process and Design Center-Dallas TX Texas Instruments, Incorporated MS-944, PO Box 655621, Dallas, Texas 75265, USA
fYear
1987
fDate
22-23 May 1987
Firstpage
105
Lastpage
106
Keywords
EPROM; Electric breakdown; Etching; Instruments; Leakage current; Nonvolatile memory; Process design; Substrates; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480444
Link To Document