DocumentCode :
472796
Title :
High Density Memory Cell Structure
Author :
Itoh, K. ; Sunami, H.
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
48
Lastpage :
49
Keywords :
Capacitors; Circuit noise; DRAM chips; Electron devices; Laboratories; Manufacturing; Noise reduction; Parasitic capacitance; Random access memory; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480519
Link To Document :
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