• DocumentCode
    472796
  • Title

    High Density Memory Cell Structure

  • Author

    Itoh, K. ; Sunami, H.

  • Author_Institution
    Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
  • fYear
    1981
  • fDate
    9-11 Sept. 1981
  • Firstpage
    48
  • Lastpage
    49
  • Keywords
    Capacitors; Circuit noise; DRAM chips; Electron devices; Laboratories; Manufacturing; Noise reduction; Parasitic capacitance; Random access memory; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1981. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Type

    conf

  • Filename
    4480519