DocumentCode :
472798
Title :
One Micron LSI MOS Memory Using Direct Electron Beam Lithography
Author :
Shah, P. ; Pollack, G. ; Miller, R. ; Varnell, G. ; Love, R. ; Lee, W. ; Wood, S. ; Robbins, R.
Author_Institution :
Texas Instruments Incorporated P. O. Box 225012, MS-82, Dallas, Texas 75065
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
52
Lastpage :
53
Keywords :
Circuits; Electron beams; Implants; Instruments; Large scale integration; Lithography; Optical design; Resists; Vehicles; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480521
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472798
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