DocumentCode
472804
Title
"Very High Speed Devices for VLSI"
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
63
Lastpage
63
Keywords
Degradation; Electric resistance; Epitaxial growth; FETs; Fabrication; Gallium arsenide; Integrated circuit yield; MOS devices; Parasitic capacitance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480527
Link To Document