Title :
Reactive Ion Beam Etching for VLSI
Author_Institution :
Rockwell International Microelectronics Research and Development Ctr. Anaheim, CA 92803
Keywords :
Acceleration; Aluminum alloys; Circuits; Costs; Etching; Ion beams; Plasma applications; Resists; Silicon; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
