DocumentCode :
472807
Title :
CVD Silicon Oxide below 100°c Utilizing Photochemical Combustion of SiH4 and O2
Author :
Sarkozy, R.F.
Author_Institution :
Carlsbad Research Center Hughes Aircraft Company Industrial Electronics Group Carlsbad, California, 92008
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
68
Lastpage :
69
Keywords :
Chemical vapor deposition; Combustion; Etching; Hydrogen; Mercury (metals); Photochemistry; Plasma sources; Plasma temperature; Propellants; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480530
Link To Document :
بازگشت