Title :
High Pressure Oxidation for Thin Gate Insulator Process
Author :
Hirayama, M. ; Miyoshi, H. ; Tsubouchi, N. ; Abe, H.
Author_Institution :
Computer Development Laboratory, Mitsubishi Electric Co. Itami, Hyoqo 664 Japan
Keywords :
Dielectric breakdown; Dielectric thin films; Dielectrics and electrical insulation; Laboratories; Large scale integration; Oxidation; Research and development; Semiconductor films; Temperature distribution; Very large scale integration;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
