Title :
Silicides as the New IGFET Gate Electrode/Interconnect
Author :
Geipel, H.J. ; Koburger, C.W.
Author_Institution :
IBM, General Technology Division Essex Junction, Vermont
Keywords :
Annealing; Conductivity; Electrodes; Grain size; Integrated circuit interconnections; Optical films; Silicides; Silicon; Very large scale integration; Wiring;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
