DocumentCode
472812
Title
Silicides as the New IGFET Gate Electrode/Interconnect
Author
Geipel, H.J. ; Koburger, C.W.
Author_Institution
IBM, General Technology Division Essex Junction, Vermont
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
78
Lastpage
79
Keywords
Annealing; Conductivity; Electrodes; Grain size; Integrated circuit interconnections; Optical films; Silicides; Silicon; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480535
Link To Document