DocumentCode :
472817
Title :
2D Process Modeling and Simulation for VLSI Design
Author :
Maldonado, C.D. ; Hall, W.F. ; Murphy, W.O. ; Louie, S.A.
Author_Institution :
Rockwell International Corporation Anaheim, CA
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
88
Lastpage :
89
Keywords :
Boron; Boundary value problems; Fabrication; Geometry; Implants; Ion implantation; MOS devices; Process design; Solid modeling; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480540
Link To Document :
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