DocumentCode :
472820
Title :
A New Transmission Line Model for Silicided Diffusions: Impact on the Performance of VLSI Circuits
Author :
Scott, D.B. ; Hunter, W.R. ; Shichijo, H.
Author_Institution :
Texas Instruments Incorporated Central Research Laboratories Dallas, Texas 75265
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
94
Lastpage :
95
Keywords :
Boron; Conductivity; Contact resistance; Distributed parameter circuits; Integrated circuit interconnections; MOS devices; Silicides; Transmission lines; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480543
Link To Document :
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