DocumentCode :
472823
Title :
1.25 μm Mosi2/Poly Gate CMOS-SOS Isoplanar Technology
Author :
Hakhu, J.K. ; Chou, P.C. ; Murthy, I. ; Uppal, J.S. ; Zwingman, R. ; McNutt, M.J. ; Downing, R. ; Colesworthy, R.
Author_Institution :
Rockwell International Anaheim, California 92803
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
8
Lastpage :
9
Keywords :
CMOS technology; Circuits; Conductivity; Dry etching; Electrodes; Glass; Leakage current; Milling; Plasma temperature; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480553
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472823
