Title :
A New Application of RIE to Planarization and Edge Rounding of Sio2 Hole in the Al Multi-Level Interconnection
Author :
Hazuki, Y. ; Moriya, T. ; Kashiwagi, M.
Author_Institution :
Toshiba Research and Development Center Toshiba Corp. Kawashaki, Japan
Keywords :
Hydrogen; Insulation; Planarization; Plasma applications; Polymer films; Resists; Silicon compounds; Space technology; Sputter etching; Sputtering;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
