Aluminum Plasma-CVD for VLSI Circuit Interconnections

Plasma-activated CVD can produce aluminum films of electronic grade. Plasma-CVD films exhibit small inclusions of impurities and resistivities of the same order as those of a sputtered film. Crystal morphology is different from conventional films and is promising for fine-line patterning. Stepcoverage over steep steps is superior to sputtering. This technique produces little damage to the thin-SiO2 MOS characteristics and may be suitable for multilevel interconnections of VLSI circuits.