DocumentCode :
472829
Title :
The Use of Electron Beam Annealing to Reduce Contact Resistance for VLSI
Author :
Chen, John Y. ; Rensch, David B.
Author_Institution :
Hughes Research Laboratories Malibu, CA 90265
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
22
Lastpage :
23
Keywords :
Annealing; CMOS technology; Conductivity; Contact resistance; Electron beams; Furnaces; Implants; Isothermal processes; Laser beams; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480560
Link To Document :
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