DocumentCode
472837
Title
An as-P(N+-N-) Double Diffused Drain MOSEFT for VLSIs
Author
Takeda, Eiji ; Kume, Hitoshi ; Nakagome, Yoshinobu ; Asi, Shojiro
Author_Institution
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
40
Lastpage
41
Keywords
Channel hot electron injection; Current measurement; Degradation; Hot carrier effects; Impact ionization; Laboratories; MOSFET circuits; Threshold voltage; Transconductance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480568
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