• DocumentCode
    472840
  • Title

    Threshold Voltage Deviation in Very Small MOS Transistors Due to Local Impurity Fluctuations

  • Author

    Hagiwara, Takaaki ; Yamaguchi, Ken ; Asai, Shojiro

  • Author_Institution
    Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, JAPAN
  • fYear
    1982
  • fDate
    1-3 Sept. 1982
  • Firstpage
    46
  • Lastpage
    47
  • Keywords
    Breakdown voltage; Dielectric breakdown; Fluctuations; Hot carrier injection; Impurities; Ion implantation; Laboratories; MOS devices; MOSFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1982. Digest of Technical Papers. Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • Filename
    4480571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472840