DocumentCode

472844

Title

Analysis of Inverse Narrow-Channel Effect Based on a Three-Dimensional Simulation

Author

Shigyo, N. ; Dang, R.L.M.

Author_Institution

Toshiba R & D Center, Toshiba Corporation 72 Horikawa-cho, Saiwai-ku, Kawasaki 210 Japan

fYear

1982

fDate

1-3 Sept. 1982

Firstpage

54

Lastpage

55

Keywords

Analytical models; Current distribution; Electrons; Finite difference methods; MOSFETs; Poisson equations; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Conference_Location

Oiso, Japan

Type

conf

Filename

4480575