Title :
Analysis of Inverse Narrow-Channel Effect Based on a Three-Dimensional Simulation
Author :
Shigyo, N. ; Dang, R.L.M.
Author_Institution :
Toshiba R & D Center, Toshiba Corporation 72 Horikawa-cho, Saiwai-ku, Kawasaki 210 Japan
Keywords :
Analytical models; Current distribution; Electrons; Finite difference methods; MOSFETs; Poisson equations; Threshold voltage;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
