• DocumentCode
    472848
  • Title

    High Performance Dynamic RAM Using Double Aluminum Layer

  • Author

    Taniguchi, M. ; Ohbayashi, Y. ; Yamada, M. ; Nagayama, Y. ; Sato, S. ; Nakano, T.

  • Author_Institution
    LSI R&D Laboratory, Mitsubishi Electric Co., 4-1, Mizuhara, Itami, Hyogo 664 Japan
  • fYear
    1982
  • fDate
    1-3 Sept. 1982
  • Firstpage
    62
  • Lastpage
    63
  • Keywords
    Aluminum; Circuits; DRAM chips; Error analysis; Large scale integration; Parasitic capacitance; Power supplies; Random access memory; Research and development; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1982. Digest of Technical Papers. Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • Filename
    4480579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472848