DocumentCode
472849
Title
Advanced DMOS Memory Cell using Trench Isolation
Author
Terada, K. ; Ishijima, T. ; Takada, M. ; Kurosawa, S. ; Suzuki, S.
Author_Institution
Basic Technology Research Laboratories, Nippon Electric Co., Ltd. 4-1-1 Miyazaki, Takatsu-ku, Kawasaki city, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
64
Lastpage
65
Keywords
Boron; Capacitance; Cities and towns; Epitaxial layers; Isolation technology; Laboratories; MOSFET circuits; Testing; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480580
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