Title :
Advanced DMOS Memory Cell using Trench Isolation
Author :
Terada, K. ; Ishijima, T. ; Takada, M. ; Kurosawa, S. ; Suzuki, S.
Author_Institution :
Basic Technology Research Laboratories, Nippon Electric Co., Ltd. 4-1-1 Miyazaki, Takatsu-ku, Kawasaki city, Japan
Keywords :
Boron; Capacitance; Cities and towns; Epitaxial layers; Isolation technology; Laboratories; MOSFET circuits; Testing; Very large scale integration; Voltage;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
