DocumentCode
472866
Title
Modeling and Simulation of Hot Carrier Effects in MOSFETs
Author
Wada, M. ; Shibata, T. ; Iizuka, H. ; Dang, R.L.M.
Author_Institution
Toshiba R&D Center Toshiba Corporation, Kawasaki, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
102
Lastpage
103
Keywords
Circuit simulation; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Probability; Research and development; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480597
Link To Document