DocumentCode :
472868
Title :
Parasitic Resistance Effects on Static MOS RAM
Author :
Shinohara, H. ; Anami, K. ; Yoshimoto, M. ; Hirata, Y. ; Nakano, T.
Author_Institution :
LSI R&D Laboratory, Mitsubishi Electric Corp. Itami, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
106
Lastpage :
107
Keywords :
Circuits; Electric resistance; Inverters; Laboratories; Large scale integration; Random access memory; Read-write memory; Research and development; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480599
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472868
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