Title :
A 64K Pseudo Static RAM with N-Well CMOS Technology
Author :
Tsuchida, S. ; Ishioka, H. ; Okuyama, Y. ; Tsujide, T. ; Tameda, M.
Author_Institution :
1st LSI Division, NEC Corporation Sagamihara Kanagawa 229, Japan
Abstract :
A 64K Pseude static RAM has been realized using direct step-on-wafer lithography technology and dry processing technology. Most outstanding feature of this RAM is low supply current during self refresh operation. The electrical performance is compatible with a standard 64K x 1 DRAM.
Keywords :
CMOS technology; Circuits; Content addressable storage; Current supplies; Degradation; Impact ionization; Random access memory; Read-write memory; Substrates; Voltage;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
