DocumentCode
472888
Title
N- and P-Well Optimization for High Speed N-Epitaxy CMOS Circuits
Author
Schwabe, U. ; Jacobs, E.P. ; Takacs, D. ; Bürker, U.
Author_Institution
Siemens AG, Central Research and Development, Microelectronics, D-8000 Munich 83, Otto-Hahn-Ring 6, FRG
fYear
1983
fDate
13-15 Sept. 1983
Firstpage
42
Lastpage
43
Keywords
Breakdown voltage; Circuits; Jacobian matrices; Length measurement; Parasitic capacitance; Propagation delay; Ring oscillators; Temperature; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Print_ISBN
4-930813-05-0
Type
conf
Filename
4480628
Link To Document