Title :
High Speed CMOS Devices Fabricated on Laser-Recrystallized Polycrystalline Silicon Island
Author :
Akasaka, Y. ; Nishimura, T. ; Nakata, H.
Author_Institution :
LSI Research and Development Laboratory Mitsubishi Electric Corporation 4-1, Mizuhara Itami, 664, Japan
Keywords :
Boron; Grain boundaries; Large scale integration; MOSFETs; Power lasers; Propagation delay; Ring oscillators; Silicon on insulator technology; Threshold voltage; Voltage-controlled oscillators;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
