DocumentCode

472892

Title

CMOS Isolation Using Selective Epitaxial Regrowth

Author

Jastrzebski, L. ; Ipri, A. ; Corboy, J. ; Metzl, R.

Author_Institution

RCA Laboratories Princeton, NJ 08540

fYear

1983

fDate

13-15 Sept. 1983

Firstpage

50

Lastpage

51

Keywords

Boron; Dielectrics; Doping; Etching; MOS devices; Plasma applications; Plasma devices; Plasma properties; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1983. Digest of Technical Papers. Symposium on

Conference_Location

Maui, HI, USA

Print_ISBN

4-930813-05-0

Type

conf

Filename

4480632