DocumentCode :
472892
Title :
CMOS Isolation Using Selective Epitaxial Regrowth
Author :
Jastrzebski, L. ; Ipri, A. ; Corboy, J. ; Metzl, R.
Author_Institution :
RCA Laboratories Princeton, NJ 08540
fYear :
1983
fDate :
13-15 Sept. 1983
Firstpage :
50
Lastpage :
51
Keywords :
Boron; Dielectrics; Doping; Etching; MOS devices; Plasma applications; Plasma devices; Plasma properties; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
Type :
conf
Filename :
4480632
Link To Document :
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