DocumentCode :
472908
Title :
Computer Simulation of Electron Scattering by Heavy Atoms Added into Resist for Dry Etch Resistance Enhancement
Author :
Hasegawa, S. ; Iida, Y.
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation 4-1-1, Miyazaki, Miyamae-ku, Kawasaki 213, Japan
fYear :
1983
fDate :
13-15 Sept. 1983
Firstpage :
84
Lastpage :
85
Keywords :
Computer simulation; Dry etching; Electrons; Laboratories; Microelectronics; National electric code; Plasma simulation; Polymers; Resists; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
Type :
conf
Filename :
4480648
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472908
