DocumentCode :
472910
Title :
The Influence of Thermal Silicon Nitride Formation on VLSI Fabrication
Author :
Shintani, Akira ; Kusaka, Takahisa ; Mizuo, Shoichi ; Hayashi, Kunio ; Okuhira, Hidekazu
Author_Institution :
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
fYear :
1983
fDate :
13-15 Sept. 1983
Firstpage :
90
Lastpage :
91
Keywords :
Dielectric substrates; Dielectric thin films; FETs; Fabrication; MOS capacitors; Nitrogen; Oxidation; Semiconductor films; Silicon compounds; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
Type :
conf
Filename :
4480651
Link To Document :
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