Title :
Encroachment-Free Tungsten CVD Process for Self-Aligned Source-Drain-Gate Metallization
Author :
Moriya, T. ; Yamada, K. ; Shibata, T. ; Iizuka, H. ; Kashiwagi, M.
Author_Institution :
Integrated Circuits Laboratory Toshiba Corporation, Kawasaki, Japan
Keywords :
Atomic layer deposition; Integrated circuit interconnections; MOSFETs; Metallization; Silicidation; Silicides; Space technology; Surface resistance; Tungsten; Very large scale integration;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
