• DocumentCode
    472913
  • Title

    Encroachment-Free Tungsten CVD Process for Self-Aligned Source-Drain-Gate Metallization

  • Author

    Moriya, T. ; Yamada, K. ; Shibata, T. ; Iizuka, H. ; Kashiwagi, M.

  • Author_Institution
    Integrated Circuits Laboratory Toshiba Corporation, Kawasaki, Japan
  • fYear
    1983
  • fDate
    13-15 Sept. 1983
  • Firstpage
    96
  • Lastpage
    97
  • Keywords
    Atomic layer deposition; Integrated circuit interconnections; MOSFETs; Metallization; Silicidation; Silicides; Space technology; Surface resistance; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1983. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Print_ISBN
    4-930813-05-0
  • Type

    conf

  • Filename
    4480654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472913