DocumentCode
472914
Title
A New MoSi2/Thin-Poly Si Gate Process
Author
Fukumoto, M. ; Shinohara, A. ; Okada, S. ; Kugimiya, K.
Author_Institution
Central Research Laboratory Matsushita Electric Industrial Company, Ltd. Moriguchi Osaka 570, Japan
fYear
1983
fDate
13-15 Sept. 1983
Firstpage
98
Lastpage
99
Keywords
Adhesives; Annealing; Dielectric breakdown; Dry etching; Electrodes; MOS capacitors; Silicides; Sputter etching; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Print_ISBN
4-930813-05-0
Type
conf
Filename
4480655
Link To Document