Title :
A New MoSi2/Thin-Poly Si Gate Process
Author :
Fukumoto, M. ; Shinohara, A. ; Okada, S. ; Kugimiya, K.
Author_Institution :
Central Research Laboratory Matsushita Electric Industrial Company, Ltd. Moriguchi Osaka 570, Japan
Keywords :
Adhesives; Annealing; Dielectric breakdown; Dry etching; Electrodes; MOS capacitors; Silicides; Sputter etching; Temperature; Very large scale integration;
Conference_Titel :
VLSI Technology, 1983. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Print_ISBN :
4-930813-05-0
