Effects of Plasma-Processing on EEPROM Tunnel Oxides

Author

Faraone, L. ; Ipri, A.C.

Author_Institution

RCA Laboratories Princeton, NJ 08540 U.S.A.

fYear

1983

fDate

13-15 Sept. 1983

Firstpage

106

Lastpage

107

Keywords

Current density; EPROM; Etching; Nonvolatile memory; Plasma applications; Plasma chemistry; Plasma devices; Silicon; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1983. Digest of Technical Papers. Symposium on

Conference_Location

Maui, HI, USA

Print_ISBN

4-930813-05-0

Type

Filename

4480659

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