• DocumentCode
    472919
  • Title

    SEPOX Compatible High Density Floating Gate EPROM Structure

  • Author

    Matsukawa, N. ; Niitsu, Y. ; Matsunaga, J. ; Nozawa, H. ; Kohyama, S.

  • Author_Institution
    Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
  • fYear
    1983
  • fDate
    13-15 Sept. 1983
  • Firstpage
    108
  • Lastpage
    109
  • Keywords
    Capacitance; EPROM; Large scale integration; Logic devices; Microprocessors; Nonvolatile memory; Oxidation; Testing; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1983. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Print_ISBN
    4-930813-05-0
  • Type

    conf

  • Filename
    4480660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472919